PART |
Description |
Maker |
3DD2101 3DD2101-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2101 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD2102-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2102 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD2109 3DD2109-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2109 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
IRG4PC40KPBF |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
|
International Rectifier
|
IRG4BC30K-SPBF |
INSULATED GATE BIPOLAR TRANSISTOR Short Ciruit Rated UltraFast IGBT
|
International Rectifier
|
IRG4PH30KPBF |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Ultrafast IGBT 绝缘栅双极晶体管短路额定IGBT的超
|
International Rectifier, Corp.
|
IRGPC40K 1982 |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT From old datasheet system
|
IRF[International Rectifier]
|
TAN250A |
Case Outline 55AW / Style 1 high power COMMON BASE bipolar transistor.
|
GHZTECH[GHz Technology]
|
IRGR3B60KD2 IRGR3B60KD2PBF |
600V Non Punch Through, Short Circuit Rated IGBT in a D-Pak package. INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
JANTXV2N7224 JANTX2N7224 2N7224 IRFM150 |
HEXFET Transistor(HEXFET 晶体 的HEXFET晶体管(之HEXFET晶体管) REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET? TRANSISTOR 100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
|
International Rectifier, Corp. IRF[International Rectifier]
|
HCA0207 |
Bipolar Transistor; Package/Case:TO-3P; Current Rating:12A; Voltage Rating:800V Carbon Film Resistors, Power Type From old datasheet system
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|